TK4A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TK4A50D(STA4,Q,M) |
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Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | MOSFET N-CH 500V 4A TO220SIS |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.94 |
10+ | $0.826 |
100+ | $0.6329 |
500+ | $0.5003 |
1000+ | $0.4003 |
2000+ | $0.3627 |
5000+ | $0.3377 |
10000+ | $0.3252 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 4.4V @ 1mA |
Vgs (Max) | ±30V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | TO-220SIS |
Serie | π-MOSVII |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
Verlustleistung (max) | 30W (Tc) |
Verpackung / Gehäuse | TO-220-3 Full Pack |
Paket | Tube |
Betriebstemperatur | 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 380 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 500 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 4A (Ta) |
Grundproduktnummer | TK4A50 |
TK4A50D(STA4,Q,M) Einzelheiten PDF [English] | TK4A50D(STA4,Q,M) PDF - EN.pdf |
TK4A50D TOS
TOSHIBA TO247-3
TOSHIBA TO-247
TK4A53D TOSHIBA/
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TK4A55DA TOSHIBA
PB-F POWER MOSFET TRANSISTOR TO2
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MOSFET N-CH 550V 3.5A TO220SIS
X35 PB-F POWER MOSFET TRANSISTOR
TOSHIBA TO-220F
TOSHIBA 2015
TK4A55DA TK4A55D TOSHIBA/
TOSHIBA TO-247
TOSHIBA TO-220F
TOSHIBA TO-220
TOS TO-220
TK4A55D TOSHIBA
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() TK4A50D(STA4,Q,M)Toshiba Semiconductor and Storage |
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